| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)
3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
|
| SST5114 SST5116 |
1K x 8 Dual-Port Static RAM
64-Kbit (8K x 8) Static RAM 晶体管|场效应| P通道| SOT - 23封装
|
Omron Electronics, LLC
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC |
4-Mbit (512K x 8) Static RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 Static RAM 12k × 8静态RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| S71JL064HA0 |
Stacked Multi-chip Product (MCP) Flash Memory And Psram CMOS 3.0Volt-only, Simultaneous Operation Flash Memories And Static RAM/pseudo-static RAM
|
AMD
SPANSION
|
| IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62LV2568LL IS62LV2568L 25_62LV2568L-LL IS62LV256 |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| W24257A W24257 |
32K*8HIGH SPEED CMOS STATIC RAM
32K*8CMOS STATIC RAM
From old datasheet system
|
Winbond
|
